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PD -97151
IRFH7934PBF
Applications
l l
HEXFET(R) Power MOSFET
Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC Converters in Networking Systems
VDSS 30V
RDS(on) max Qg 3.5m:@VGS = 10V 20nC
Benefits
l l l l l l l l
Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering
D D D D
S S S G
PQFN 5X6
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 20 24 19 76 190 3.1 2.0 0.025 -55 to + 150
Units
V
A
g Power Dissipation g
Power Dissipation
c
W W/C C
Linear Derating Factor Operating Junction and
g
Storage Temperature Range
Thermal Resistance
Parameter
RJC RJA Junction-to-Case
f
Typ.
--- ---
Max.
2.9 40
Units
C/W
Junction-to-Ambient
g
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10
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2/11/09
1
IRFH7934PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 110 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.021 2.9 4.2 1.8 -6.5 --- --- --- --- --- 20 4.8 2.5 6.3 6.4 8.8 15 1.7 12 16 14 7.5 3100 623 241 --- --- 3.5 5.1 2.35 --- 1.0 150 100 -100 --- 30 --- --- --- --- --- --- 3.1 --- --- --- --- --- --- --- Typ. --- --- pF ns nC nC VDS = 15V VGS = 4.5V ID = 19A V
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 24A VGS = 4.5V, ID = 19A
V/C Reference to 25C, ID = 1mA m V mV/C A nA S
e e
VDS = VGS, ID = 50A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 19A
See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 19A RG=1.8 See Fig.15 VGS = 0V VDS = 15V = 1.0MHz Max. 97 19 Units mJ A
Avalanche Characteristics
EAS IAR
d
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 20 28 3.9 A 190 1.0 30 42 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 19A, VGS = 0V TJ = 25C, IF = 19A, VDD = 15V di/dt = 325A/s
e
eASee Fig.16
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH7934PBF
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V
TOP
100
BOTTOM
VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V
10
10
2.7V
2.7V
1 0.1 1
60s PULSE WIDTH Tj = 25C
10 100
60s PULSE WIDTH Tj = 150C
1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
ID = 24A
100
VGS = 10V
1.5
TJ = 150C
10
1
TJ = 25C
1.0
0.1
VDS = 15V
60s PULSE WIDTH
0.01 1.0 2.0 3.0 4.0 5.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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3
IRFH7934PBF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
14 12 10 8 6 4 2 0 ID= 19A VDS= 24V VDS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss Crss
100 1 10 100
0
10
20
30
40
50
60
70
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100sec 10 DC 1 1msec
ISD, Reverse Drain Current (A)
100
TJ = 150C
10
TJ = 25C
1
VGS = 0V
0.1 0.2 0.4 0.6 0.8 1.0 1.2
TA = 25C Tj = 150C Single Pulse 0.1 1
10msec
0.1 10 100 VDS , Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFH7934PBF
25
20
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
2.0
15
ID = 50A
1.6
10
5
1.2
0 25 50 75 100 125 150
0.8 -75 -50 -25 0 25 50 75 100 125 150
TJ , Ambient Temperature (C)
TJ , Temperature ( C )
Fig 9. Maximum Drain Current vs. Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
Thermal Response ( ZthJC )
10
1
0.20 0.10 0.05 0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 C
0.1
1
2
3
4
4
Ci= i/Ri Ci i/Ri
Ri (C/W) (sec) 6.955975 0.065034 15.08336 5.307554 1.818966 0.00141 16.08526 0.757022
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1 1 10 100
0.001 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFH7934PBF
( RDS (on), Drain-to -Source On Resistance m)
14
ID = 24A
12 10 8 6 4 2 0 2 3 4 5 6 7 8 9 10
EAS, Single Pulse Avalanche Energy (mJ)
400
300
ID 2.5A 3.7A BOTTOM 19A
TOP
200
TJ = 125C
TJ = 25C
100
0 25 50 75 100 125 150
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS VGS
RD
VDS
L
DRIVER
RG V10V GS Pulse Width 1 s Duty Factor 0.1
D.U.T.
+
-VDD
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 15a. Switching Time Test Circuit
90%
VDS
10%
VGS
I AS
td(on)
tr
td(off)
tf
Fig 14b. Unclamped Inductive Waveforms
Fig 15b. Switching Time Waveforms
6
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IRFH7934PBF
D.U.T
Driver Gate Drive Period D= P.W. Period VGS=10V
+
P.W.
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Current Regulator Same Type as D.U.T.
Vds Vgs
Id
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Test Circuit
Fig 18. Gate Charge Waveform
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7
IRFH7934PBF
PQFN Package Details
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFH7934PBF
PQFN Part Marking
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRFH7934PBF
Orderable part number IRFH7934TRPBF Qualification information Qualification level Moisture Sensitivity Level RoHS compliant
Cons umer (per JE DE C JE S D47F

Package Type PQFN 5mm x 6mm
Standard Pack Form Quantity Tape and Reel 4000
Note
guidelines ) MS L2

PQFN 5mm x 6mm
(per JE DE C J-S T D-020D
)
Yes
Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.535mH, RG = 25, IAS = 19A. Pulse width 400s; duty cycle 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.2/2009
10
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